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onsemi

FDC2512-P

MFR #FDC2512-P

FPN#FDC2512-P-FL

MFRonsemi

Part DescriptionMOSFET N-CH 150V SUPERSOT6
Datasheet
190631-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDC2512
Lifecycle StatusObsolete
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage150V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance344pF
Input Capacitance Test Voltage75V
Life Cycle StatusObsolete
Maximum Continuous Drain Current1.4A (Ta)
Maximum Drain to Source Resistance425 mOhm @ 1.4A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation800mW (Ta)
Maximum Pulse Drain Current8A
Maximum Total Gate Charge11nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 30% from Suppliers use this Dimension
Package TypeSuperSOT™-6
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.3nC
Typical Gate to Source Charge1.5nC