FDBL86561-F085
MFR #FDBL86561-F085
FPN#FDBL86561-F085-FL
MFRonsemi
Part DescriptionPower Field-Effect Transistor, 300A I(D), 60V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-299A
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDBL86561_F085 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2000 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 13650pF |
| Input Capacitance Test Voltage | 30V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 300A (Tc) |
| Maximum Drain to Source Resistance | 1.1 mOhm @ 80A, 10V |
| Maximum Gate to Source Threshold Voltage | 4V @ 250µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 429W (Tj) |
| Maximum Pulse Drain Current | N/A |
| Maximum Total Gate Charge | 220nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | 8-HPSOF |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 24nC |
| Typical Gate to Source Charge | 56nC |