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FDBL0200N100
onsemi

FDBL0200N100

MFR #FDBL0200N100

FPN#FDBL0200N100-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 100 V 300A (Tc) 429W (Tc) Surface Mount, 8-HPSOF
Datasheet
44481-Datasheet
Quote Only
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Multiples of: 2000
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Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDBL0200N100
Packaging TypeTape and Reel
Packaging Quantity2000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package Type8-HPSOF
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance9760pF
Input Capacitance Test Voltage50V
Maximum Continuous Drain Current300A (Tc)
Maximum Drain to Source Resistance2 mOhm @ 80A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation429W (Tc)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge133nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge20nC
Typical Gate to Source Charge31nC