(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDB9506L-F085
onsemi

FDB9506L-F085

MFR #FDB9506L-F085

FPN#FDB9506L-F085-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 40V 110A (Tc) TO-263-3 T/R-
Datasheet
44478-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDB9506L-F085
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage40V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±16V
Input Capacitance9100pF
Input Capacitance Test Voltage20V
Life Cycle StatusObsolete
Maximum Continuous Drain Current110A (Tc)
Maximum Drain to Source Resistance3.6 mOhm @ 80A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation176W (Tc)
Maximum Pulse Drain Current1.26mA
Maximum Total Gate ChargeN/A
Maximum Total Gate Charge Test VoltageN/A
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge16nC
Typical Gate to Source Charge27nC