(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDB8870-F085
onsemi

FDB8870-F085

MFR #FDB8870-F085

FPN#FDB8870-F085-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 23A (Ta), 160A (Tc) TO-263-3 T/R
Datasheet
63399-Datasheet
Quote Onlymore info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDB8870_F085
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance5200pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current23A (Ta), 160A (Tc)
Maximum Drain to Source Resistance3.9 mOhm @ 35A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation160W (Tc)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge132nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge23nC
Typical Gate to Source Charge15nC