(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDB86366-F085
onsemi

FDB86366-F085

MFR #FDB86366-F085

FPN#FDB86366-F085-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 80V 110A (Tc) 176W (Tj) Surface Mount, TO-263-3
Datasheet
100678-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDB86366_F085
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance6280pF
Input Capacitance Test Voltage40V
Life Cycle StatusObsolete
Maximum Continuous Drain Current110A (Tc)
Maximum Drain to Source Resistance3.6 mOhm @ 80A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation176W (Tj)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge112nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge18nC
Typical Gate to Source Charge86nC