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FDB3502
onsemi

FDB3502

MFR #FDB3502

FPN#FDB3502-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 75V 6A (Ta), 14A (Tc) TO-263-3
Datasheet
97536-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDB3502
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusLast Time Buy
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeTO-263 (D2PAK)
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage75V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance815pF
Input Capacitance Test Voltage40V
Maximum Continuous Drain Current6A (Ta), 14A (Tc)
Maximum Drain to Source Resistance47 mOhm @ 6A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.1W (Ta), 41W (Tc)
Maximum Pulse Drain Current40A
Maximum Total Gate Charge15nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3nC
Typical Gate to Source Charge4nC