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FDB2614
onsemi

FDB2614

MFR #FDB2614

FPN#FDB2614-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 200V 62A (Tc) 260W (Tc) Surface Mount, TO-263-3
Datasheet
44462-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDB2614
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage200V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance7230pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current62A (Tc)
Maximum Drain to Source Resistance27 mOhm @ 31A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation260W (Tc)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge99nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge18nC
Typical Gate to Source Charge35nC