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FDB2552-F085
onsemi

FDB2552-F085

MFR #FDB2552-F085

FPN#FDB2552-F085-FL

MFRonsemi

Part DescriptionN-Channel 150 V 5A (Ta), 37A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)
Datasheet
44460-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDB2552_F085
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage150V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2800pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current5A (Ta), 37A (Tc)
Maximum Drain to Source Resistance36 mOhm @ 16A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation150W (Tc)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge51nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8.3nC
Typical Gate to Source Charge13.5nC