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FDB120N10
onsemi

FDB120N10

MFR #FDB120N10

FPN#FDB120N10-FL

MFRonsemi

Part DescriptionN-Channel 100 V 74A (Tc) 170W (Tc) Surface Mount D²PAK (TO-263)
Datasheet
44457-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDB120N10
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusLast Time Buy
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance5605pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current74A (Tc)
Maximum Drain to Source Resistance12 mOhm @ 74A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation170W (Tc)
Maximum Pulse Drain Current296A
Maximum Total Gate Charge86nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge20nC
Typical Gate to Source Charge26nC