(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDB088N08
onsemi

FDB088N08

MFR #FDB088N08

FPN#FDB088N08-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 75V 120A (Tc) TO-263-3 T/R
Datasheet
136956-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDB088N08
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusLast Time Buy
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage75V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance6595pF
Input Capacitance Test Voltage25V
Life Cycle StatusLast Time Buy
Maximum Continuous Drain Current120A (Tc)
Maximum Drain to Source Resistance8.8 mOhm @ 75A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation160W (Tc)
Maximum Pulse Drain Current340A
Maximum Total Gate Charge118nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge28nC
Typical Gate to Source Charge22nC