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FDB0630N1507L
onsemi

FDB0630N1507L

MFR #FDB0630N1507L

FPN#FDB0630N1507L-FL

MFRonsemi

Part DescriptionMOSFET N-CH 150V 130A TO263-7
Datasheet
97535-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDB0630N1507L
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage150V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance9895pF
Input Capacitance Test Voltage75V
Life Cycle StatusActive
Maximum Continuous Drain Current130A (Tc)
Maximum Drain to Source Resistance6.4 mOhm @ 18A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation3.8W (Ta), 300W (Tc)
Maximum Pulse Drain Current720A
Maximum Total Gate Charge135nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeD2PAK (TO-263)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge17nC
Typical Gate to Source Charge30nC