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FDB0300N1007L
onsemi

FDB0300N1007L

MFR #FDB0300N1007L

FPN#FDB0300N1007L-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 100V 200A (Tc) TO-263-7 T/R
Datasheet
97534-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDB0300N1007L
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusLast Time Buy
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance8295pF
Input Capacitance Test Voltage50V
Life Cycle StatusLast Time Buy
Maximum Continuous Drain Current200A (Tc)
Maximum Drain to Source Resistance3 mOhm @ 26A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 250W (Tc)
Maximum Pulse Drain Current1.09kA
Maximum Total Gate Charge113nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeD2PAK (TO-263)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge16nC
Typical Gate to Source Charge24nC