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FDB0165N807L
MFR #FDB0165N807L
FPN#FDB0165N807L-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 80V 310A(Tc) 3.8W(Ta) 300W(Tc) Surface Mount, TO-263-7
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDB0165N807L |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 800 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 80V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 23660pF |
| Input Capacitance Test Voltage | 40V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 310A (Tc) |
| Maximum Drain to Source Resistance | 1.6 mOhm @ 36A, 10V |
| Maximum Gate to Source Threshold Voltage | 4V @ 250µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Power Dissipation | 3.8W (Ta), 300W (Tc) |
| Maximum Pulse Drain Current | 1.78kA |
| Maximum Total Gate Charge | 304nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | D2PAK (TO-263) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 38nC |
| Typical Gate to Source Charge | 75nC |