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FDB0105N407L
onsemi

FDB0105N407L

MFR #FDB0105N407L

FPN#FDB0105N407L-FL

MFRonsemi

Part DescriptionMOSFET N-CH 40V 460A TO263-7
Datasheet
97532-Datasheet
Quote Only
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Multiples of: 800
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Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDB0105N407L
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Package TypeD2PAK (TO-263)
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance23100pF
Input Capacitance Test Voltage20V
Maximum Continuous Drain Current460A (Tc)
Maximum Drain to Source Resistance800 µOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.8W (Ta), 300W (Tc)
Maximum Pulse Drain Current2.54kA
Maximum Total Gate Charge291nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge29nC
Typical Gate to Source Charge64nC