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FDA38N30
onsemi

FDA38N30

MFR #FDA38N30

FPN#FDA38N30-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 300 V 38A (Tc) 312W (Tc) Through Hole, TO-3PN-3
Datasheet
44446-Datasheet
Quote Onlymore info
Multiples of: 30more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDA38N30
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeTO-3PN
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage300V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance2600pF
Input Capacitance Test Voltage25V
Maximum Continuous Drain Current38A (Tc)
Maximum Drain to Source Resistance85 mOhm @ 19A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation312W (Tc)
Maximum Pulse Drain Current150A
Maximum Total Gate Charge60nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge28nC
Typical Gate to Source Charge17nC