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FCU600N65S3R0
onsemi

FCU600N65S3R0

MFR #FCU600N65S3R0

FPN#FCU600N65S3R0-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 650V 6A (Tc) 54W (Tc) Through Hole, TO-251-3
Datasheet
136955-Datasheet
Quote Onlymore info
Multiples of: 1800more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCU600N65S3R0
Packaging TypeTube
Packaging Quantity1800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance465pF
Input Capacitance Test Voltage400V
Life Cycle StatusObsolete
Maximum Continuous Drain Current6A (Tc)
Maximum Drain to Source Resistance600 mOhm @ 3A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 600µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation54W (Tc)
Maximum Pulse Drain Current15A
Maximum Total Gate Charge11nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeI-Pak
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.9nC
Typical Gate to Source Charge3nC