(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FCU360N65S3R0
onsemi

FCU360N65S3R0

MFR #FCU360N65S3R0

FPN#FCU360N65S3R0-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 650V 10A IPAK Tube
Datasheet
99358-Datasheet
Quote Onlymore info
Multiples of: 1800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCU360N65S3R0
Packaging TypeTube
Packaging Quantity1800
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive VoltageN/A
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance730pF
Input Capacitance Test Voltage400V
Life Cycle StatusObsolete
Maximum Continuous Drain Current10A
Maximum Drain to Source Resistance360 mOhm @ 5A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 200µA
Maximum Junction Temperature150°C
Maximum Operating TemperatureN/A
Maximum Power Dissipation83W
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge18nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C
Minimum Operating TemperatureN/A
Package TypeI-Pak
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7.6nC
Typical Gate to Source Charge4.3nC