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FCU3400N80Z
onsemi

FCU3400N80Z

MFR #FCU3400N80Z

FPN#FCU3400N80Z-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 800V 2A (Tc) 32W (Tc) Through Hole, TO-251-3
Datasheet
44438-Datasheet
Quote Onlymore info
Multiples of: 1800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCU3400N80Z
Packaging TypeTube
Packaging Quantity1800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage800V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance400pF
Input Capacitance Test Voltage100V
Life Cycle StatusObsolete
Maximum Continuous Drain Current2A (Tc)
Maximum Drain to Source Resistance3.4 Ohm @ 1A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 200µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation32W (Tc)
Maximum Pulse Drain Current4A
Maximum Total Gate Charge9.6nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeI-Pak
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.1nC
Typical Gate to Source Charge1.6nC