(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FCPF600N65S3R0L
onsemi

FCPF600N65S3R0L

MFR #FCPF600N65S3R0L

FPN#FCPF600N65S3R0L-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 650V 6A(Tc) 24W(Tc) Through Hole, TO-220-3
Datasheet
44433-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCPF600N65S3R0L
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance465pF
Input Capacitance Test Voltage400V
Life Cycle StatusObsolete
Maximum Continuous Drain Current6A (Tc)
Maximum Drain to Source Resistance600 mOhm @ 3A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 120µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation24W (Tc)
Maximum Pulse Drain Current15A
Maximum Total Gate Charge11nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeTO-220F-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.9nC
Typical Gate to Source Charge3nC