
onsemi
FCPF600N60ZL1-F154
MFR #FCPF600N60ZL1-F154
FPN#FCPF600N60ZL1-F154-FL
MFRonsemi
Part DescriptionN-Channel 600 V 7.4A (Tj) 28W (Tc) Through Hole TO-220F
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | FCPF600N60ZL1-F154 |
Packaging Type | Tube |
Packaging Quantity | 1000 |
Lifecycle Status | Active |
ROHS | Compliant with Exemption |
RoHs Exemption Type | 7(a), RoHS (2015/863) |
RoHs China | Not Compliant |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 600V |
Drive Voltage | 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 1120pF |
Input Capacitance Test Voltage | 25V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 7.4A (Tj) |
Maximum Drain to Source Resistance | 600 mOhm @ 3.7A, 10V |
Maximum Gate to Source Threshold Voltage | 3.5V @ 250µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 28W (Tc) |
Maximum Pulse Drain Current | 22.2A |
Maximum Total Gate Charge | 26nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | TO-220FP |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 7.5nC |
Typical Gate to Source Charge | 3.4nC |