FCPF4300N80Z
MFR #FCPF4300N80Z
FPN#FCPF4300N80Z-FL
MFRonsemi
Part DescriptionN-Channel 800 V 1.6A (Tc) 19.2W (Tc) Through Hole TO-220F-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FCPF4300N80Z |
| Packaging Type | Tube |
| Packaging Quantity | 1000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 800V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 355pF |
| Input Capacitance Test Voltage | 100V |
| Life Cycle Status | Last Time Buy |
| Maximum Continuous Drain Current | 1.6A (Tc) |
| Maximum Drain to Source Resistance | 4.3 Ohm @ 800mA, 10V |
| Maximum Gate to Source Threshold Voltage | 4.5V @ 160µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 19.2W (Tc) |
| Maximum Pulse Drain Current | 3.2A |
| Maximum Total Gate Charge | 8.8nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | TO-220-3 Fullpack/TO-220F-3SG |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 3nC |
| Typical Gate to Source Charge | 1.38nC |