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FCPF250N65S3R0L-F154
MFR #FCPF250N65S3R0L-F154
FPN#FCPF250N65S3R0L-F154-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 650V 12A (Tj) 31W (Tc) Through Hole, TO-220-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | FCPF250N65S3R0L |
Packaging Type | Tube |
Packaging Quantity | 1000 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 650V |
Drive Voltage | 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±30V |
Input Capacitance | 1010pF |
Input Capacitance Test Voltage | 400V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 12A (Tj) |
Maximum Drain to Source Resistance | 250 mOhm @ 6A, 10V |
Maximum Gate to Source Threshold Voltage | 4.5V @ 290µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 31W (Tc) |
Maximum Pulse Drain Current | 30A |
Maximum Total Gate Charge | 24nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | TO-220F-3 |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 9.7nC |
Typical Gate to Source Charge | 6.1nC |