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FCPF1300N80ZYD
onsemi

FCPF1300N80ZYD

MFR #FCPF1300N80ZYD

FPN#FCPF1300N80ZYD-FL

MFRonsemi

Part DescriptionN-Channel 800 V 4A (Tc) 24W (Tc) Through Hole TO-220F-3 (Y-Forming)
Datasheet
44413-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCPF1300N80Z
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage800V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance880pF
Input Capacitance Test Voltage100V
Life Cycle StatusObsolete
Maximum Continuous Drain Current4A (Tc)
Maximum Drain to Source Resistance1.3 Ohm @ 2A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 400µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation24W (Tc)
Maximum Pulse Drain Current12A
Maximum Total Gate Charge21nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220F-3 (Y-Forming)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge6.8nC
Typical Gate to Source Charge3.5nC