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FCP9N60N-F102
onsemi

FCP9N60N-F102

MFR #FCP9N60N-F102

FPN#FCP9N60N-F102-FL

MFRonsemi

Part DescriptionN-Channel 600 V 9A (Tc) 83.3W (Tc) Through Hole TO-220F
Datasheet
44409-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCP9N60N
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage600V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance1240pF
Input Capacitance Test Voltage100V
Life Cycle StatusObsolete
Maximum Continuous Drain Current9A (Tc)
Maximum Drain to Source Resistance385 mOhm @ 4.5A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation83.3W (Tc)
Maximum Pulse Drain Current27A
Maximum Total Gate Charge29nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7.1nC
Typical Gate to Source Charge4.1nC