FCP650N80Z
MFR #FCP650N80Z
FPN#FCP650N80Z-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 800V 10A(Tc) 162W(Tc) Through Hole, TO-220-3
Datasheet
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FCP650N80Z |
| Packaging Type | Tube |
| Packaging Quantity | 800 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 800V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 1565pF |
| Input Capacitance Test Voltage | 100V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 10A (Tc) |
| Maximum Drain to Source Resistance | 650 mOhm @ 4A, 10V |
| Maximum Gate to Source Threshold Voltage | 4.5V @ 800µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 162W (Tc) |
| Maximum Pulse Drain Current | 24A |
| Maximum Total Gate Charge | 35nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 11nC |
| Typical Gate to Source Charge | 6nC |