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FCP380N60E
onsemi

FCP380N60E

MFR #FCP380N60E

FPN#FCP380N60E-FL

MFRonsemi

Part DescriptionN-Channel 600 V 10.2A (Tc) 106W (Tc) Through Hole TO-220-3
Datasheet
44407-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCP380N60E
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusLast Time Buy
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage600V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1770pF
Input Capacitance Test Voltage25V
Life Cycle StatusLast Time Buy
Maximum Continuous Drain Current10.2A (Tc)
Maximum Drain to Source Resistance380 mOhm @ 5A, 10V
Maximum Gate to Source Threshold Voltage3.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation106W (Tc)
Maximum Pulse Drain Current30.6A
Maximum Total Gate Charge45nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge13nC
Typical Gate to Source Charge5.3nC