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FCHD125N65S3R0-F155
onsemi

FCHD125N65S3R0-F155

MFR #FCHD125N65S3R0-F155

FPN#FCHD125N65S3R0-F155-FL

MFRonsemi

Part DescriptionN-Channel 650 V 24A (Tc) 181W (Tc) Through Hole TO-247-3
Datasheet
44396-Datasheet
Quote Onlymore info
Multiples of: 30more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCHD125N65S3R0
Packaging TypeTube
Packaging Quantity30
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance1940pF
Input Capacitance Test Voltage400V
Life Cycle StatusObsolete
Maximum Continuous Drain Current24A (Tc)
Maximum Drain to Source Resistance125 mOhm @ 12A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 590µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation181W (Tc)
Maximum Pulse Drain Current60A
Maximum Total Gate Charge46nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeTO-247
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge19nC
Typical Gate to Source Charge12nC