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FCHD040N65S3-F155
onsemi

FCHD040N65S3-F155

MFR #FCHD040N65S3-F155

FPN#FCHD040N65S3-F155-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 650V 65A (Tc) TO247
Datasheet
99416-Datasheet
Quote Onlymore info
Multiples of: 30more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCHD040N65S3
Packaging TypeTube
Packaging Quantity30
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance4740pF
Input Capacitance Test Voltage400V
Life Cycle StatusObsolete
Maximum Continuous Drain Current65A (Tc)
Maximum Drain to Source Resistance40 mOhm @ 32.5A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 1.7mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation417W (Tc)
Maximum Pulse Drain Current162.5A
Maximum Total Gate Charge136nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-247
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge59nC
Typical Gate to Source Charge33nC