FCH190N65F-F155
MFR #FCH190N65F-F155
FPN#FCH190N65F-F155-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 650V 20.6A(Tc) 208W(Tc) Through Hole, TO-247-3
Datasheet
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FCH190N65F |
| Packaging Type | Tube |
| Packaging Quantity | 450 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 650V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 3225pF |
| Input Capacitance Test Voltage | 100V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 20.6A (Tc) |
| Maximum Drain to Source Resistance | 190 mOhm @ 10A, 10V |
| Maximum Gate to Source Threshold Voltage | 5V @ 2mA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 208W (Tc) |
| Maximum Pulse Drain Current | 61.8A |
| Maximum Total Gate Charge | 78nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | TO-247-3LD |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 25nC |
| Typical Gate to Source Charge | 12nC |