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onsemi

FCH190N65F-F085

MFR #FCH190N65F-F085

FPN#FCH190N65F-F085-FL

MFRonsemi

Part DescriptionN-Channel 650 V 20.6A (Tc) 208W (Tc) Through Hole TO-247-3
Datasheet
44390-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCH190N65F_F085
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance3181pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current20.6A (Tc)
Maximum Drain to Source Resistance190 mOhm @ 27A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation208W (Tc)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge82nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-247-3LD
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge28nC
Typical Gate to Source Charge63nC