
FCH150N65F-F155
MFR #FCH150N65F-F155
FPN#FCH150N65F-F155-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 650V 24A (Tc) TO247-3 Tube
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | FCH150N65F | 
| Lifecycle Status | Obsolete | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| ROHS China | Not Compliant | 
| Reach Status | Not Compliant | 
| Channel Mode | Enhancement | 
| Configuration | N-Channel | 
| Drain Source Voltage | 650V | 
| Drive Voltage | 10V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±20V | 
| Input Capacitance | 3737pF | 
| Input Capacitance Test Voltage | 100V | 
| Life Cycle Status | Last Time Buy | 
| Maximum Continuous Drain Current | 24A (Tc) | 
| Maximum Drain to Source Resistance | 150 mOhm @ 12A, 10V | 
| Maximum Gate to Source Threshold Voltage | 5V @ 2.4mA | 
| Maximum Junction Temperature | 150°C (TJ) | 
| Maximum Operating Temperature | N/A | 
| Maximum Power Dissipation | 298W (Tc) | 
| Maximum Pulse Drain Current | 72A | 
| Maximum Total Gate Charge | 94nC | 
| Maximum Total Gate Charge Test Voltage | 10V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Minimum Operating Temperature | N/A | 
| Package Type | TO-247-3LD | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | 31nC | 
| Typical Gate to Source Charge | 15nC | 
