
FCH150N65F-F155
MFR #FCH150N65F-F155
FPN#FCH150N65F-F155-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 650V 24A (Tc) TO247-3 Tube
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FCH150N65F |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 650V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 3737pF |
| Input Capacitance Test Voltage | 100V |
| Life Cycle Status | Last Time Buy |
| Maximum Continuous Drain Current | 24A (Tc) |
| Maximum Drain to Source Resistance | 150 mOhm @ 12A, 10V |
| Maximum Gate to Source Threshold Voltage | 5V @ 2.4mA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 298W (Tc) |
| Maximum Pulse Drain Current | 72A |
| Maximum Total Gate Charge | 94nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | TO-247-3LD |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 31nC |
| Typical Gate to Source Charge | 15nC |
