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onsemi

FCH077N65F-F085

MFR #FCH077N65F-F085

FPN#FCH077N65F-F085-FL

MFRonsemi

Part DescriptionN-Channel 650 V 54A (Tc) 481W (Tc) Through Hole TO-247-3
Datasheet
44388-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCH077N65F_F085
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusActive (NRND)
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance7162pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive (NRND)
Maximum Continuous Drain Current54A (Tc)
Maximum Drain to Source Resistance77 mOhm @ 27A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation481W (Tc)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge164nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-247-3LD
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge53nC
Typical Gate to Source Charge28nC