
FCH077N65F-F085
MFR #FCH077N65F-F085
FPN#FCH077N65F-F085-FL
MFRonsemi
Part DescriptionN-Channel 650 V 54A (Tc) 481W (Tc) Through Hole TO-247-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | FCH077N65F_F085 | 
| Packaging Type | Tube | 
| Packaging Quantity | 450 | 
| Lifecycle Status | Active (NRND) | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| ROHS China | Not Compliant | 
| Reach Status | Not Compliant | 
| Channel Mode | Enhancement | 
| Configuration | N-Channel | 
| Drain Source Voltage | 650V | 
| Drive Voltage | 10V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±20V | 
| Input Capacitance | 7162pF | 
| Input Capacitance Test Voltage | 25V | 
| Life Cycle Status | Active (NRND) | 
| Maximum Continuous Drain Current | 54A (Tc) | 
| Maximum Drain to Source Resistance | 77 mOhm @ 27A, 10V | 
| Maximum Gate to Source Threshold Voltage | 5V @ 250µA | 
| Maximum Junction Temperature | 150°C (TJ) | 
| Maximum Operating Temperature | N/A | 
| Maximum Power Dissipation | 481W (Tc) | 
| Maximum Pulse Drain Current | N/A | 
| Maximum Total Gate Charge | 164nC | 
| Maximum Total Gate Charge Test Voltage | 10V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Minimum Operating Temperature | N/A | 
| Package Type | TO-247-3LD | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | 53nC | 
| Typical Gate to Source Charge | 28nC | 
