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onsemi

FCH041N65EF-F155

MFR #FCH041N65EF-F155

FPN#FCH041N65EF-F155-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 650V 76A (Tc) TO247-3
Datasheet
102290-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCH041N65EF
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance12560pF
Input Capacitance Test Voltage100V
Life Cycle StatusActive
Maximum Continuous Drain Current76A (Tc)
Maximum Drain to Source Resistance41 mOhm @ 38A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation595W (Tc)
Maximum Pulse Drain Current228A
Maximum Total Gate Charge298nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-247-3LD
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge90nC
Typical Gate to Source Charge50nC