FCH023N65S3L4
MFR #FCH023N65S3L4
FPN#FCH023N65S3L4-FL
MFRonsemi
Part DescriptionMOSFET N-Channel Single 650V 75A (Tc) TO247 Tube
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FCH023N65S3L4 |
| Packaging Type | Tube |
| Packaging Quantity | 450 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 650V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±30V |
| Input Capacitance | 7160pF |
| Input Capacitance Test Voltage | 400V |
| Life Cycle Status | Active (NRND) |
| Maximum Continuous Drain Current | 75A (Tc) |
| Maximum Drain to Source Resistance | 23 mOhm @ 37.5A, 10V |
| Maximum Gate to Source Threshold Voltage | 4.5V @ 7.5mA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 595W (Tc) |
| Maximum Pulse Drain Current | 300A |
| Maximum Total Gate Charge | 222nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | TO-247-4 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 90nC |
| Typical Gate to Source Charge | 54nC |