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FCH023N65S3L4
onsemi

FCH023N65S3L4

MFR #FCH023N65S3L4

FPN#FCH023N65S3L4-FL

MFRonsemi

Part DescriptionMOSFET N-Channel Single 650V 75A (Tc) TO247 Tube
Datasheet
44381-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCH023N65S3L4
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance7160pF
Input Capacitance Test Voltage400V
Life Cycle StatusActive (NRND)
Maximum Continuous Drain Current75A (Tc)
Maximum Drain to Source Resistance23 mOhm @ 37.5A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 7.5mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation595W (Tc)
Maximum Pulse Drain Current300A
Maximum Total Gate Charge222nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-247-4
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge90nC
Typical Gate to Source Charge54nC