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FCD900N60Z
onsemi

FCD900N60Z

MFR #FCD900N60Z

FPN#FCD900N60Z-FL

MFRonsemi

Part DescriptionMOSFET N-Channel Single 600V 4.5A (Tc) TO-252-3
Datasheet
44378-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCD900N60Z
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage600V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance720pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current4.5A (Tc)
Maximum Drain to Source Resistance900 mOhm @ 2.3A, 10V
Maximum Gate to Source Threshold Voltage3.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation52W (Tc)
Maximum Pulse Drain Current13.5A
Maximum Total Gate Charge17nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.8nC
Typical Gate to Source Charge2.3nC