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onsemi

FCD360N65S3R0

MFR #FCD360N65S3R0

FPN#FCD360N65S3R0-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 650 V 10A (Tc) 83W (Tc) Surface Mount, D-PAK, TO-252-3
Datasheet
44376-Datasheet
Quote Only
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Multiples of: 2500
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Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCD360N65S3R0
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeTO-252 (DPAK)
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance730pF
Input Capacitance Test Voltage400V
Maximum Continuous Drain Current10A (Tc)
Maximum Drain to Source Resistance360 mOhm @ 5A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation83W (Tc)
Maximum Pulse Drain Current25A
Maximum Total Gate Charge18nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7.6nC
Typical Gate to Source Charge4.3nC