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FCD2250N80Z
onsemi

FCD2250N80Z

MFR #FCD2250N80Z

FPN#FCD2250N80Z-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 800V 2.6A(Tc) Surface Mount, TO-252-3
Datasheet
141893-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCD2250N80Z
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage800V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance585pF
Input Capacitance Test Voltage100V
Life Cycle StatusActive
Maximum Continuous Drain Current2.6A (Tc)
Maximum Drain to Source Resistance2.25 Ohm @ 1.3A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 260µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation39W (Tc)
Maximum Pulse Drain Current6.5A
Maximum Total Gate Charge14nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.3nC
Typical Gate to Source Charge2.2nC