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FCD2250N80Z
onsemi

FCD2250N80Z

MFR #FCD2250N80Z

FPN#FCD2250N80Z-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 800V 2.6A(Tc) Surface Mount, TO-252-3
Datasheet
141893-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCD2250N80Z
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage800V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance585pF
Input Capacitance Test Voltage100V
Life Cycle StatusActive
Maximum Continuous Drain Current2.6A (Tc)
Maximum Drain to Source Resistance2.25 Ohm @ 1.3A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 260µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation39W (Tc)
Maximum Pulse Drain Current6.5A
Maximum Total Gate Charge14nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.3nC
Typical Gate to Source Charge2.2nC