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FCB099N65S3
onsemi

FCB099N65S3

MFR #FCB099N65S3

FPN#FCB099N65S3-FL

MFRonsemi

Part DescriptionN-Channel 650 V 30A (Tc) 227W (Tc) Surface Mount DPAK-3 (TO-263-3)
Datasheet
44370-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCB099N65S3
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance2480pF
Input Capacitance Test Voltage400V
Life Cycle StatusActive
Maximum Continuous Drain Current30A (Tc)
Maximum Drain to Source Resistance99 mOhm @ 15A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 740µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation227W (Tc)
Maximum Pulse Drain Current75A
Maximum Total Gate Charge61nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeD2PAK-3 (TO-263)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge25nC
Typical Gate to Source Charge15nC