FAM65CR51DZ1
MFR #FAM65CR51DZ1
FPN#FAM65CR51DZ1-FL
MFRonsemi
Part DescriptionPower Integrated Module (PIM) Boost Converter Stage for Multiphase and Semi-Bridgeless PFC
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Integrated Circuits (ICs) |
| Sub Category | Power Management ICs |
| Family Name | FAM65CR51DZ1 |
| Packaging Type | Tube |
| Packaging Quantity | 72 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Drain Source Voltage | 650V |
| Drive Voltage | 10V |
| FET Feature | Standard |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 4864pF |
| Input Capacitance Test Voltage | 400V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 33A (Tc) |
| Maximum Drain to Source Resistance | 51 mOhm @ 20A, 10V |
| Maximum Gate to Source Threshold Voltage | 5V @ 3.3mA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 160W (Tc) |
| Maximum Pulse Drain Current | N/A |
| Maximum Total Gate Charge | 123nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | APMCD-B16 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 49nC |
| Typical Gate to Source Charge | 37.5nC |