ESDL2012MX4T5G
MFR #ESDL2012MX4T5G
FPN#ESDL2012MX4T5G-FL
MFRonsemi
Part DescriptionBi-Directional TVS Zener Diode 5.2V Clamp 8A Ipp Surface Mount, 2-X4DFN
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Diodes and Rectifiers |
| Family Name | ESDL2012 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 10000 |
| Lifecycle Status | Active |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| Clamping Voltage | 5.2V |
| Configuration | Single |
| ESD Air Gap Voltage | 16kV |
| ESD Contact Voltage | 16kV |
| Life Cycle Status | Active |
| Maximum EFT Protection Current | N/A |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Leakage Current | 500nA |
| Maximum Operating Temperature | N/A |
| Maximum Peak Pulse Current | 8A |
| Maximum Peak Pulse Power | N/A |
| Maximum Power Dissipation | 313mW |
| Minimum Breakdown Voltage | 1.4V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Number of Bidirectional Channels | 1 |
| Number of Channels | 1 |
| Number of Unidirectional Channels | N/R |
| Package Type | 2-X4DFN (0.6x0.3) |
| Polarity | Bi-Directional |
| Power Line Protection | No |
| Test Current | 1mA |
| Tolerance | ±22% |
| Type | Zener |
| Typical Breakdown Voltage | 1.6V |
| Typical Dynamic Resistance | 300 mOhm |
| Typical I O Capacitance | 0.18pF @ 1MHz |
| Typical Reverse Standoff voltage | 1V (Max) |