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EMG2DXV5T5G
onsemi

EMG2DXV5T5G

MFR #EMG2DXV5T5G

FPN#EMG2DXV5T5G-FL

MFRonsemi

Part DescriptionDigital BJT Array 50V 100mA 230mW SOT-553 T/R
Datasheet
43650-Datasheet
Quote Onlymore info
Multiples of: 8000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameEMG2DXV5
Packaging TypeTape and Reel
Packaging Quantity8000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Base Resistance - R147 kOhm
Configuration2 NPN - Pre-Biased
Emitter Base Resistance - R247 kOhm
Gain BandwidthN/A
Life Cycle StatusObsolete
Maximum Collector Base Voltage50V
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage250mV @ 300µA, 10mA
Maximum Cutoff Collector Current500nA
Maximum Emitter Base VoltageN/A
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation230mW
Minimum DC Current Gain80 @ 5mA, 10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 75% from Suppliers use this Dimension
Package TypeSOT-553
Resistor Ratio R1 R21
Technology TypeSI
Transistor TypeArray