(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
EMD5DXV6T5G
onsemi

EMD5DXV6T5G

MFR #EMD5DXV6T5G

FPN#EMD5DXV6T5G-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Datasheet
43648-Datasheet
Quote Onlymore info
Multiples of: 8000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameEMD5DXV6
Packaging TypeTape and Reel
Packaging Quantity8000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Base Resistance - R14.7 kOhm
Configuration1 NPN, 1 PNP - Pre-Biased
Emitter Base Resistance - R210 kOhm
Gain BandwidthN/A
Life Cycle StatusObsolete
Maximum Collector Base Voltage50V
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage250mV @ 300µA, 10mA
Maximum Cutoff Collector Current500nA
Maximum Emitter Base VoltageN/A
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation500mW
Minimum DC Current Gain20 @ 5mA, 10V, 80 @ 5mA, 10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 74% from Suppliers use this Dimension
Package TypeSOT-563
Resistor Ratio R1 R20.47
Technology TypeSI
Transistor TypeArray