(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
EMC2DXV5T1G
onsemi

EMC2DXV5T1G

MFR #EMC2DXV5T1G

FPN#EMC2DXV5T1G-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA - 500mW Surface Mount SOT-553
Datasheet
43646-Datasheet
Quote Onlymore info
Multiples of: 4000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameEMC2DXV5T1G
Packaging TypeTape and Reel
Packaging Quantity4000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Base Resistance - R122 kOhm
Configuration1 NPN, 1 PNP - Pre-Biased
Emitter Base Resistance - R222 kOhm
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Base Voltage50V
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage250mV @ 300µA, 10mA
Maximum Cutoff Collector Current500nA
Maximum Emitter Base Voltage5V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation500mW
Minimum DC Current Gain60 @ 5mA, 10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 75% from Suppliers use this Dimension
Package TypeSOT-553
Resistor Ratio R1 R21
Technology TypeSI
Transistor TypeArray