
onsemi
EFC8811R-TF
MFR #EFC8811R-TF
FPN#EFC8811R-TF-FL
MFRonsemi
Part DescriptionMOSFET Array 2 N-Channel (Dual) Common Drain 2.5W Surface Mount, 6-SMD
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | EFC8811R |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 5000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel, Common Drain |
| Drain Source Voltage | 12V |
| Drive Voltage | 2.5V, 4.5V |
| FET Feature | Standard |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±8V |
| Input Capacitance | N/A |
| Input Capacitance Test Voltage | N/A |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | N/A |
| Maximum Drain to Source Resistance | 3.2 mOhm @ 5A, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.3V @ 1mA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 2.5W |
| Maximum Pulse Drain Current | N/A |
| Maximum Total Gate Charge | 100nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | N/A |
| Minimum Operating Temperature | N/A |
| Package Type | EFCP3517-6DGH-020 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | N/A |
| Typical Gate to Source Charge | N/A |
