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EFC8811R-TF

MFR #EFC8811R-TF

FPN#EFC8811R-TF-FL

MFRonsemi

Part DescriptionMOSFET Array 2 N-Channel (Dual) Common Drain 2.5W Surface Mount, 6-SMD
Quote Onlymore info
Multiples of: 5000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameEFC8811R
Packaging TypeTape and Reel
Packaging Quantity5000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel, Common Drain
Drain Source Voltage12V
Drive Voltage2.5V, 4.5V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±8V
Input CapacitanceN/A
Input Capacitance Test VoltageN/A
Life Cycle StatusObsolete
Maximum Continuous Drain CurrentN/A
Maximum Drain to Source Resistance3.2 mOhm @ 5A, 4.5V
Maximum Gate to Source Threshold Voltage1.3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.5W
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge100nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction TemperatureN/A
Package TypeEFCP3517-6DGH-020
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A