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EFC6602R-A-TR
onsemi

EFC6602R-A-TR

MFR #EFC6602R-A-TR

FPN#EFC6602R-A-TR-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel, Common Drain 12V 18A (Ta) 6-BGA
Datasheet
198378-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameEFC6602R
Packaging TypeTape and Reel
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package Type6-WLCSP (1.81x2.7)
Channel ModeDepletion
Configuration2 N-Channel, Common Drain
Drain Source Voltage12V
Drive Voltage2.5V, 4.5V
FET FeatureLogic Level Gate, 2.5V Drive
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±12V
Input CapacitanceN/A
Input Capacitance Test VoltageN/A
Maximum Continuous Drain Current18A (Ta)
Maximum Drain to Source Resistance5.9 mOhm @ 3A, 4.5V
Maximum Gate to Source Threshold Voltage1.3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2W (Ta)
Maximum Pulse Drain Current60A
Maximum Total Gate Charge55nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction TemperatureN/A
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A