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EFC4C012NLTDG

EFC4C012NLTDG

MFR #EFC4C012NLTDG

FPN#EFC4C012NLTDG-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel, Common Drain 30V 19A (Ta) 6-SMD T/R
Quote Onlymore info
Multiples of: 5000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameEFC4C012NL
Packaging TypeTape and Reel
Packaging Quantity5000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeDepletion
Configuration2 N-Channel, Common Drain
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input CapacitanceN/A
Input Capacitance Test VoltageN/A
Life Cycle StatusObsolete
Maximum Continuous Drain Current19A (Ta)
Maximum Drain to Source Resistance6.5 mOhm @ 5A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
Maximum Pulse Drain Current76A
Maximum Total Gate Charge18nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction TemperatureN/A
Package Type6-WLCSP (3.5x1.9)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A