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EFC4C012NLTDG
MFR #EFC4C012NLTDG
FPN#EFC4C012NLTDG-FL
MFRonsemi
Part DescriptionMOSFET 2 N-Channel, Common Drain 30V 19A (Ta) 6-SMD T/R
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | EFC4C012NL |
Packaging Type | Tape and Reel |
Packaging Quantity | 5000 |
Lifecycle Status | Obsolete |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
ROHS China | Compliant |
Reach Status | Compliant |
Channel Mode | Depletion |
Configuration | 2 N-Channel, Common Drain |
Drain Source Voltage | 30V |
Drive Voltage | 4.5V, 10V |
FET Feature | Standard |
FET Options | N/R |
FET Type | Array |
Gate to Source Voltage | ±20V |
Input Capacitance | N/A |
Input Capacitance Test Voltage | N/A |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 19A (Ta) |
Maximum Drain to Source Resistance | 6.5 mOhm @ 5A, 10V |
Maximum Gate to Source Threshold Voltage | 2.2V @ 1mA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 2.5W (Ta) |
Maximum Pulse Drain Current | 76A |
Maximum Total Gate Charge | 18nC |
Maximum Total Gate Charge Test Voltage | 4.5V |
Minimum Junction Temperature | N/A |
Package Type | 6-WLCSP (3.5x1.9) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | N/A |
Typical Gate to Source Charge | N/A |