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EFC4C012NLTDG
onsemi

EFC4C012NLTDG

MFR #EFC4C012NLTDG

FPN#EFC4C012NLTDG-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel, Common Drain 30V 19A (Ta) 6-SMD T/R
Datasheet
43557-Datasheet
Quote Onlymore info
Multiples of: 5000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameEFC4C012NL
Packaging TypeTape and Reel
Packaging Quantity5000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeDepletion
Configuration2 N-Channel, Common Drain
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input CapacitanceN/A
Input Capacitance Test VoltageN/A
Life Cycle StatusObsolete
Maximum Continuous Drain Current19A (Ta)
Maximum Drain to Source Resistance6.5 mOhm @ 5A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2.5W (Ta)
Maximum Pulse Drain Current76A
Maximum Total Gate Charge18nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction TemperatureN/A
Minimum Operating TemperatureN/A
Package Type6-WLCSP (3.5x1.9)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A