
EFC2K102NUZTDG
MFR #EFC2K102NUZTDG
FPN#EFC2K102NUZTDG-FL
MFRonsemi
Part DescriptionMOSFET Array 12V 33A (Ta) 3.1W (Ta) Surface Mount, 10-SMD
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | EFC2K102NUZ |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 5000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel, Common Drain |
| Drain Source Voltage | 12V |
| Drive Voltage | 2.5V, 4.5V |
| FET Feature | Logic Level Gate, 2.5V Drive |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±8V |
| Input Capacitance | N/A |
| Input Capacitance Test Voltage | N/A |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 33A (Ta) |
| Maximum Drain to Source Resistance | 2.65 mOhm @ 5A, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.3V @ 1mA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 3.1W (Ta) |
| Maximum Pulse Drain Current | 135A |
| Maximum Total Gate Charge | 42nC |
| Maximum Total Gate Charge Test Voltage | 3.8V |
| Minimum Junction Temperature | N/A |
| Minimum Operating Temperature | N/A |
| Package Type | 10-WLCSP (2.98x1.49) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | N/A |
| Typical Gate to Source Charge | N/A |
