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onsemi

ECH8695R-TL-W

MFR #ECH8695R-TL-W

FPN#ECH8695R-TL-W-FL

MFRonsemi

Part DescriptionPower Field-Effect Transistor, 11A I(D), N-Channel, Metal-oxide Semiconductor FET
Datasheet
149639-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameECH8695R
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel, Common Drain
Drain Source Voltage24V
Drive Voltage2.5V, 4.5V
FET FeatureLogic Level Gate, 2.5V Drive
FET OptionsN/R
FET TypeArray
Gate to Source Voltage12.5V
Input CapacitanceN/A
Input Capacitance Test VoltageN/A
Life Cycle StatusActive
Maximum Continuous Drain Current11A
Maximum Drain to Source Resistance9.1 mOhm @ 5A, 4.5V
Maximum Gate to Source Threshold Voltage1.3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.4W
Maximum Pulse Drain Current60A
Maximum Total Gate Charge10nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction TemperatureN/A
Package TypeSOT-28FL/ECH8
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.5nC
Typical Gate to Source Charge1.6nC