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onsemi

ECH8690-TL-H

MFR #ECH8690-TL-H

FPN#ECH8690-TL-H-FL

MFRonsemi

Part DescriptionMOSFET 1 N-Channel, 1 P-Channel Array 60V 4.7A, 3.5A 8-SMD
Datasheet
43504-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameECH8690
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN and P-Channel
Drain Source Voltage60V
Drive Voltage4V, 10V
FET FeatureLogic Level Gate, 4V Drive
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance955pF
Input Capacitance Test Voltage20V
Life Cycle StatusActive
Maximum Continuous Drain Current4.7A, 3.5A
Maximum Drain to Source Resistance55 mOhm @ 2A, 10V, 94 mOhm @ 1A, 10V
Maximum Gate to Source Threshold Voltage2.6V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Operating Temperature150°C (TC)
Maximum Power Dissipation1.5W
Maximum Pulse Drain Current30A
Maximum Total Gate Charge18nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction TemperatureN/A
Minimum Operating TemperatureN/A
Package TypeSOT-28FL/ECH8
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.8nC
Typical Gate to Source Charge3nC